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Point-contact (crystal) semiconductor device

机译:点接触(晶体)半导体器件

摘要

794,843. Semi-conductor devices. STANDARD TELEPHONES & CABLES, Ltd. Oct. 28, 1955 [Nov. 4, 1954], No. 30893/55. Class 37. A point contact semi-conductor device comprises a conducting member closely surrounding the junction between the point contact and the semi-conductor body but insulated from both the point contact and the body. This member acts to reduce the interelectrode capacitance of the device and hence improves its high-frequency operation. In Fig. 1 the pointed wire 3, which is attached to Ni pin 2 by a pressuremoulded Pb or Pb alloy plug 5, contacts a Ge, Si or AISb alloy crystal 8 attached by welding, soldering or by a conductive cement, e.g. a polyethoxylene type cement containing Ag or AgSb alloy, to pin 6 which carries a similar plug 7. The two sub-assemblies are force-fitted into an unglazed non-porous tube 1 of glass, alumina, titania, or plastics, e.g. polymonochlorotrifluoroethylene and polytetranuoroethylene. An apertured disc 9 of Cu, CuSn alloy, Ni or Ag fits in slots in the tube 1. Wire 3 which may be of Pt, Wo, Ag, Pd, Au, Cu, Pt-Ru alloy, Ag-Sn alloy or phosphor bronze may be coated except at its tip by insulation, e.g. enamel and/or the disc 9 may be so coated around the aperture. Polyethoxylene resin 12 completes the assembly. Disc 9 may be earthed or maintained at such a potential as to accelerate or retard electrons injected into the crystal, being in the latter case earthed to A.C. by a capacitor. The disc may be foraminous, e.g. comprised of a screen of wires through one of the holes in which wire 3 passes. In a further alternative, Fig. 3, the disc is replaced by cone 19, the flange of which overlies the flanged end of the insulating tube, the pin carrying wire 20 being sealed through an insulating cap. In a further embodiment the pins bearing point contact and crystal respectively are mounted in glass, ceramic, polymonochlortrifluorethylene or polytetrafluorethylene plugs force-fitted in the ends of an earthed conductive tube formed at its centre with an inwardlyprojecting flange which closely surrounds the contact.
机译:794,843。半导体器件。标准电话电缆公司1955年10月28日[十一月。 [1954年4月],第30893/55号。第37类。点接触半导体装置包括紧密围绕点接触与半导体本体之间的接合部但与点接触与本体均绝缘的导电构件。该构件起到减小装置的电极间电容的作用,从而改善其高频操作。在图1中,通过压模的Pb或Pb合金插塞5附接到Ni销2的尖线3接触通过焊接,软钎焊或通过导电胶例如硅酸盐附接的Ge,Si或AISb合金晶体8。装有Ag或AgSb合金的聚乙二烯型水泥,固定到带有相似塞子7的销6上。两个子组件被压入玻璃,氧化铝,二氧化钛或塑料(例如玻璃)的无釉无孔管1中。聚一氯三氟乙烯和聚四氟乙烯。 Cu,CuSn合金,Ni或Ag的带孔圆盘9安装在管1的狭槽中。导线3可以是Pt,Wo,Ag,Pd,Au,Cu,Pt-Ru合金,Ag-Sn合金或磷可以用绝缘材料在尖端涂青铜,例如搪瓷和/或盘9可以在孔周围涂覆。聚乙撑树脂12完成组装。盘9可以接地或保持在一定电位,以加速或阻止注入晶体的电子,在后一种情况下,通过电容器接地到A.C.。盘可以是有孔的,例如。包括由穿过电线3穿过其中一个的孔之一的电线屏蔽层组成。在另一可选方案中,图3中,圆盘被圆锥体19所代替,圆锥体的凸缘覆盖在绝缘管的凸缘端上,插针承载线20通过绝缘帽密封。在另一个实施例中,带有点触头和晶体的销钉分别安装在玻璃,陶瓷,聚一氯三氟乙烯或聚四氟乙烯的插头中,该插头压入形成在其中心的接地导电管的端部,该导电管的向内凸出的凸缘紧密地围绕触头。

著录项

  • 公开/公告号GB794843A

    专利类型

  • 公开/公告日1958-05-14

    原文格式PDF

  • 申请/专利权人 STANDARD TELEPHONES AND CABLES LIMITED;

    申请/专利号GB19550030893

  • 发明设计人

    申请日1955-10-28

  • 分类号H01L21/00;H01L23/16;H01L29/00;

  • 国家 GB

  • 入库时间 2022-08-23 20:25:15

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