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Improvements in or relating to evaporation processes for the deposition of metals, particularly for use in the making of semi-conductor devices

机译:改进或相关于金属沉积的蒸发工艺,特别是用于制造半导体器件的蒸发工艺

摘要

839,081. Coating by vapour deposition. ' WESTINGHOUSE ELECTRIC CORPORATION. Dec. 13, 1957, No. 38775/57. Class 82(2) [Also in Group XXXVI] In a process of evaporating the metal of a metal body to deposit a coating thereof on a member disposed below the metal body, the temperature of the body is raised to the evaporation point so as to effect the evaporation of volatile impurities and metal, the impurities and metal flowing toward the member are collected for an initial time period to prevent them reaching the member, and pure metal is allowed to deposit on the member only after the impurities volatilizable at the evaporation temperature have been driven off. The process is applicable to the deposition of doping material upon a semiconductor such as Ge or Si to provide a P-N junction therein. As shown, Ge wafers 14 are heated by graphite heater 15 and coated with Al by evaporation from body 28, impurities from said body being intercepted during the initial stage of the evaporation by shield 30 which is swung aside when all the impurities have been dissipated. Other metals which may be evaporated are In, As, Sb, Ga and Ag. Pure Al for making a transistor junction may be produced by evaporating Al on to a glass plate and then stripping off the resulting film.
机译:839,081。通过气相沉积进行涂层。西屋电气公司。 1957年12月13日,编号38775/57。第82(2)类[也在第XXXVI组中]在蒸发金属体的金属以在其上沉积一层涂层的过程中,将金属体的温度升高到蒸发点,从而达到影响挥发的杂质和金属的蒸发,在最初的一段时间内收集流向部件的杂质和金属以防止它们到达部件,并且只有在蒸发温度下可挥发的杂质挥发后,才允许纯金属沉积在部件上被赶走了。该方法适用于在诸如Ge或Si的半导体上沉积掺杂材料以在其中提供P-N结。如图所示,Ge晶片14被石墨加热器15加热并通过从主体28的蒸发而被Al覆盖,在蒸发的初始阶段,屏蔽体30拦截了来自所述主体的杂质,当所有杂质被消散时,屏蔽体30被甩开。可以蒸发的其他金属是In,As,Sb,Ga和Ag。可以通过将Al蒸发到玻璃板上然后剥离所得膜来生产用于形成晶体管结的纯Al。

著录项

  • 公开/公告号GB839081A

    专利类型

  • 公开/公告日1960-06-29

    原文格式PDF

  • 申请/专利权人 WESTINGHOUSE ELECTRIC CORPORATION;

    申请/专利号GB19570038775

  • 发明设计人 NEW THORNDIKE CHANG TEH;

    申请日1957-12-13

  • 分类号C23C14/24;H01L21/00;

  • 国家 GB

  • 入库时间 2022-08-23 19:04:03

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