Grain boundary transistor analog memory device

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  机译： 基于晶体管高K栅极电介质中电荷陷阱的细粒度模拟存储设备

• 4. FINE-GRAINED ANALOG MEMORY DEVICE BASED ON CHARGE-TRAPPING IN HIGH-K GATE DIELECTRICS OF TRANSISTORS [P] . 美国专利： US2017329575A1 . 2017-11-16

  机译： 基于电荷陷阱的晶体管高K栅极介电的精细模拟存储器

• 5. Magnetic recording medium and magnetic memory device including magnetic layers having granular structure of magnetic grains and grain boundary portion [P] . 美国专利： US10008220B2 . 2018-06-26

  机译： 包括具有磁性颗粒的粒状结构和颗粒边界部分的磁性层的磁性记录介质和磁性存储装置

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