Thin magnetizable layer for reaction, dance amplifier, memory elements or the like.

• 1. 一种适用于原位红外检测的薄液层电化学反应池 [P] . 中国专利： CN208459323U . 2019.02.01
• 2. 一种适用于原位红外检测的薄液层电化学反应池 [P] . 中国专利： CN109001271A . 2018-12-14
• 3. MAGNETO-RESISTANCE EFFECT ELEMENT. THIN FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, HEAD ARM ASSEMBLY, MAGNETIC DISK APPARATUS, SYNTHETIC ANTI-FERROMAGNETIC MAGNETIZATION FIXING LAYER, MAGNETIC MEMORY CELL, AND CURRENT SENSOR [P] . 日本专利： JP2007035105A . 2007-02-08

  机译： 磁阻效应元件。薄膜磁头，云台头组件，磁头臂组件，磁碟装置，合成抗铁磁磁固定层，磁存储单元和电流传感器

• 4. MANUFACTURING METHOD OF COMPOUND SEMICONDUCTOR AND COMPOUND INSULATOR FOR INDUCING CHEMICAL REACTION AND DIFFUSION OF ELEMENTS BY HEATING LAYERED STRUCTURE HAVING INTER LAYER OF RARE EARTH METAL AND/OR TRANSITION METAL SANDWICHED BETWEEN DIELECTRIC LAYERS, COMPOUND SEMICONDUCTOR AND COMPOUND INSULATOR MANUFACTURED BY USING THE SAME, AND PHOTOCELL, ELECTRONIC CIRCUIT, TRANSISTOR, AND MEMORY USING THE SAME [P] . 韩国专利： KR20050002916A . 2005-01-10

  机译： 介电体，复合材料，金属和金属化合物相同的电路，电子电路，晶体管和存储器

• 5. MEMORY ELEMENT AND A MEMORY DEVICE CAPABLE OF CHANGING THE MAGNETIZATION DIRECTION OF A MEMORY LAYER [P] . 韩国专利： KR20120126014A . 2012-11-20

  机译： 能够改变存储层的磁化方向的存储元件和存储设备

• 1. CoS2 Yolk-Shell Spheres Coated with Carbon Thin Layers as High Active and Stable Electrocatalysts for Hydrogen Evolution Reaction [J] . Wang Anliang, Tong Yexiang, Li Gaoren 南京航空航天大学学报（英文版） . 2018,第004期
• 2. S-type Er-Yb Co-doped Phosphate Glass Waveguide Amplifier Integrated with Cascaded Multilayer Medium Thin Film Filter [J] . CHEN Hai-yan, DAI Ji-zhi, LIU Yong-zhi 半导体光子学与技术（英文版） . 2004,第002期
• 3. Layered structure of Ni-Al multi-layered metal-intermetallic composites fabricated by in-situ reactions [J] . 张佼, 孙宝德, 夏振海 中国有色金属学报（英文版） . 2004,第006期
• 4. DIFFERENT REACTION PATHWAY FOR THE FORMATION OF Cu_2ZnSnSe_4 THIN FILM FROM DIFFERENT STACKING ORDER OF ELEMENTAL LAYERS [C] . Hyesun Yoo, Arnaud Verger, Robert Lechner, European Photovoltaic Solar Energy Conference and Exhibition . 2014
• 5. An investigation of the switching threshold of multilayer thin film magneto-resistive memory elements [D] . Waite, Ruth I. 1987
• 6. High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory [O] . Jodi M. Iwata-Harms, Guenole Jan, Huanlong Liu, -1
• 7. An investigation of the switching threshold of multilayer thin film magneto-resistive memory elements [O] . Waite, Ruth I. 1987

• 1. Effect of Reaction Temperature and Time on the Structural Properties of Cu(In,Ga)Se_2 Thin Films Deposited by Sequential Elemental Layer Technique [J] . Saira RIAZ ,Shahzad NASEEM . 材料科学技术：英文版 . 2007,第4期
• 2. Supporting Information CoS2 Yolk-Shell Spheres Coated with Carbon Thin Layers as High Active and Stable Electrocatalysts for Hydrogen Evolution Reaction [J] . Wang Anliang ,Tong Yexiang ,Li Gaoren . 南京航空航天大学学报：英文版 . 2018,第4期
• 3. 土工织物与玻纤格栅夹层用于薄沥青加铺层的比较研究 [C] . Fu Xiuzhu ,付修竹 ,Wu Guoxiong . 第七届全国交通运输领域青年学术会议 . 2007
• 4. 黑洞磁化薄吸积盘的稳定性 [A] . 郑圣明 . 2011