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A method for producing a good warmth by means of gear of a semiconductor component to the inner wall of its housing

机译:一种通过将半导体部件固定在其壳体的内壁上来产生良好的保暖性的方法

摘要

969,483. Semi-conductor devices. TELEFUNKEN A.G. Sept. 30, 1960 [Sept. 30, 1959], No. 33608/60. Heading H1K. To improve the cooling of a semi-conductor device 5 attached to a plate 3, a foil 1 of plastically deformable material is placed across the top of the envelope 2 before the insertion of the device so that the foil is carried in with the device and forms a good heat-conducting layer between the plate 3 and the envelope. The foil may be indium or a tin-indium mixture and heat conductivity to the envelope may be further improved by heating the device so as to just melt the foil. The envelope is sealed to a base 7. The plate 3 may initially be soldered or welded in a heat conducting cylinder before insertion in the envelope or a plates-rod or hollow cylinder may be spot-welded to the end of the plate. The envelope may be of glass, metal or ceramic or the envelope may be of a different material from its base.
机译:969,483。半导体器件。 TELEFUNKEN A.G.,1960年9月30日[Sept. 30(1959),第33608/60号。标题H1K。为了改善附接到板3上的半导体装置5的冷却,在装置插入之前,将可塑性变形材料的箔1跨过外壳2的顶部放置,使得该箔随装置一起被携带,并且在板3和外壳之间形成良好的导热层。箔可以是铟或锡-铟混合物,并且可以通过加热装置以使箔熔化而进一步提高对外壳的导热性。封套被密封到基座7上。在插入封套之前,板3可以先在导热圆筒中被焊接或焊接,或者可以将板杆或空心圆筒点焊到板的末端。封套可以是玻璃,金属或陶瓷的,或者封套可以是与其底面不同的材料。

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