A method for germination and cultivation of thin, weakly doped homogeneous epitaxial silicon layers at low temperatures, in particular for the production of turns having an extremely low resistance in the direction of flow

摘要

1,148,409. Epitaxial silicon deposition. INTERNATIONAL BUSINESS MACHINES CORP. 20 Oct., 1966 [21 Oct., 1965], No. 46895/66. Heading C1A. [Also in Divisions C7 and H1] An epitaxial Si layer is grown on a Si substrate by depositing Si and Al thereon (e.g. by evaporation of an Al or Si alloy on successive layers of Al and Si) and heating the coated base at a temperature below the Al-Si eutectic temperature to cause a crystalline Si layer to grow on the substrate surface (e.g. at 565‹ C.).