Magnet core memory with a common read - and read line

摘要

1,047,780. Magnetic storage devices. RAYTHEON CO. Nov. 7, 1963 [Nov. 14, 1962], No. 43954/63. Heading H3B. In a magnetic memory including a plurality of magnetic units arranged in an array, each unit comprising a block of magnetic material having non-intersecting orthogonally disposed interrogate and storage holes threaded with an interrogate and bit write/sense conductor respectively, means are provided for decoupling the bit write current generating means from the bit conductors during an interrogate current pulse. The magnetic core memory elements are arranged in rows and columns, Fig. 1 (not shown), with a bit write/sense conductor passing through the aligned storage holes and an interrogate conductor passing through the aligned interrogate holes, one row 11 of the array being shown in Fig. 2. The bit driver control 14 is connected to the bit write/ sense conductor 13 through a decoupling circuit comprising back biased diodes 21, 22, 26, 27, the biasing potentials being such that during data read-out operation no signals of sufficient magnitude to overcome the back bias potentials on the diodes are propagated from control 14 and the only signals received by data read-out 16 are due to the signals induced in conductor 13. In order to write into the rows 11 the appropriate polarity pulse of sufficient magnitude to overcome the back bias potentials is applied to switches 33, 35, 37, 38 so that either diodes 21, 26 conduct or diodes 22, 27 conduct. Reference has been directed by the Comptroller to Specification 927,905.