A method for the production of semiconductor components according to the planar technology, in particular of double diffused germanium - bipolar planar transistors

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• 3. A method for the production of p - interdiffusion in germanium and for the production of double due to diffused a planar germanium transistors [P] . 德国专利： DE1544323A1 . 1970-02-26

  机译： 产生p-互扩散锗和产生双倍扩散平面锗晶体管的方法。

• 4. A method for the production of planar components, in particular for high frequencies to be used in the germanium - bipolar planar transistors [P] . 德国专利： DE1764269A1 . 1971-06-16

  机译： 一种制造平面部件的方法，特别是用于锗双极平面晶体管的高频部件

• 5. A method for manufacturing of double diffused germanium planar transistors [P] . 德国专利： DE1764760A1 . 1971-10-07

  机译： 一种双扩散锗平面晶体管的制造方法

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