A method for the production of an epitaxially on a n - conductive substrate made of gallium phosphide grown p - conductive gallium phosphide layer

摘要

The efficiency of gallium phosphide electroluminescent devices, emitting light in the red region of the spectrum, produced by the liquid phase epitaxial deposition of p-type material on an n-type substrate depends in part on the concentration of zinc and oxygen in the gallium solvent used in the deposition and on the heat treatment after deposition. It has been found that inclusion in the gallium of 0.03 mole percent zinc and 0.35 mole percent Ga2O3 lead to the production of mounted devices of greater than 6 percent photon efficiency when junction formation is followed by a suitable heat treating schedule.