Niobium pentoxide films prodn on heated substrate - by hydrolysis of penta chloride with water vapour in nitrogen stream, using low temp and simple apparatus

摘要

films are produced on substrates (I) by passing a first N2 stream through water and a second N2 stream through a heatable vessel, where it is enriched with NbCl5 in accurate amts. and allowing the combined N2 streams, contg. water vapour and NbCl5, to impinge on (I), which is heated (to 800 degrees C). The method can be used for producing dielectric films with high dielectric constant (E = 280 for Nb2O5) for small condensers with high capacity; and for the gate dielectric of MOS field effect transistors. The low temp. and simple appts. contrast with those involving a transport reaction via NbOCl3.