Schottky diode for large currents - provided with molybdenum rectifier contact instead of chromium contact to improve electric characteristics at elevated temps

摘要

Schottky diode (rim diode) for currents up to 800 A comprises a silicon wafer provided with an epitaxial monocrystalline Si layer onto which a Mo layer is applied forming a rectifier contact. The Mo layer is provided with a layer of a readily soldering metal, pref. Sn or Ag, and so is the lower electrode (pref. Ti) placed on the heavily doped underside of the silicon wafer. A Si3N4 layer provided with a window is pref. placed between Mo and the epitaxial layer which may additionally bear a SiO2 layer.