首页>
外国专利>
RF POWER TRANSISTOR SECONDARY BREAKDOWN PROTECTION CIRCUIT
RF POWER TRANSISTOR SECONDARY BREAKDOWN PROTECTION CIRCUIT
展开▼
机译:射频功率晶体管二次击穿保护电路
展开▼
页面导航
摘要
著录项
相似文献
摘要
A protection circuit for RF power transistors to prevent secondary breakdown includes gate means to monitor both the collector current and collector voltage. A gate pulse generated each time the collector voltage exceeds a preset value is used to gate a wave form derived from the transistor collector current. When the current wave form is in phase with the gate pulse and is of sufficient amplitude, the gate means provides a controlled voltage to bias off the transistor power supply for purposes of reducing the output power to safe operating levels.
展开▼