首页> 外国专利> Flip-flop with lower power dissipation - consists field-effect transistors and invertor stages coupled together

Flip-flop with lower power dissipation - consists field-effect transistors and invertor stages coupled together

机译:具有较低功耗的触发器-由耦合在一起的场效应晶体管和反相器级组成

摘要

Each invertor stage consists of a switching FET and a load FET, with the first switching FET drain connected to the gate of the second, and the first FET gate to the second FET drain. An AND gate consisting of two FEThs connected in series, is connected to the switching FET's drains. A further FET is between the gate of the AND gate's first FET, and the drain of corresponding switching FET's. The further FET's gates, and those of the AND gate second FET's are connected to the clock pulse inputs. Gates of the load FET's and their drains are connected to two supply voltage terminals respectively. Gates of both AND gate FET's and of load FET's are connected to an input for clock pulses, which serve as supply voltage source for the load FET's gates.
机译:每个反相器级都由一个开关FET和一个负载FET组成,第一开关FET的漏极连接到第二个FET的栅极,第一FET栅极连接到第二FET漏极。由两个串联的FETh组成的AND门连接到开关FET的漏极。另一个FET在与门的第一个FET的栅极和相应的开关FET的漏极之间。另一个FET的栅极和与门的第二个FET的栅极连接到时钟脉冲输入。负载FET的栅极及其漏极分别连接到两个电源电压端子。与门FET和负载FET的栅极都连接到时钟脉冲的输入,时钟脉冲用作负载FET的栅极的电源电压源。

著录项

  • 公开/公告号DE2405663A1

    专利类型

  • 公开/公告日1975-08-14

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE19742405663

  • 发明设计人 BIGALLKLAUS-DIETERDIPL.-PHYS.;

    申请日1974-02-06

  • 分类号H03K3/286;H03K23/00;

  • 国家 DE

  • 入库时间 2022-08-23 03:55:58

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