Growth technique for high efficiency gallium arsenide impatt diodes

摘要

High efficiency GaAs Schottky barrier IMPATT diodes comprising a non-uniformly doped depletion region are fabricated by instantaneously injecting a known volume of a known concentration of dopant at a known pressure during chemical vapor deposition epitaxial growth of the n layer forming the depletion region. This technique has yielded n+ layers 150 Angstroms thick, doped to carrier concentration values as high as 1018 cm-3, with precise control of the position of the n+ layer within the depletion region.