process of reaction of single crystal silicon doping phosphorus is uniform by irradiation with neutrons

摘要

Monocrystalline phosphorus doped silicon is prepd. by neutron irradiation of the monocrystalline silicon without subsequent annealing or aging to remove or compensate for the damage to the crystal network due to the irradiation, by a process in which a polycrystalline Si body is first formed by vapour deposition, then converted to a monocrystal and the conductivity is measured and on the bases of this measurement the neutron irradiation required at a given temp. to obtain the desired phosphorus concn. is calculated, then the polycrystalline Si is irradiated according to the values of the functions indicated. Uniform doping is obtd, without use of heat treatment appts.