SEEN TO PROMOTE A CROPP INTENDED FOR THE PRODUCTION OF THERPA OF MONOCRISTAL SKIKT

摘要

1432686 Depositing epitaxial layers PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 11 July 1973 [14 July 1972] 33026/73 Heading B1S A monocrystalline body consisting of a substrate with an epitaxial layer deposited thereon is made by dissolving a surface layer of a monocrystalline substrate material in a melt which consists of a solution of the components of the substrate material dissolved in a flux and then depositing a monocrystalline layer of the substrate material on the resulting surface from a melt which consists of a solution of the components of the substrate material dissolved in a flux. The dissolution of the surface layer and subsequent depository of the layer may be carried out in the same melt. In example I, a plate of gadolinium gallium garnet was treated with a melt of Gd 2 O 3 , Ga 2 O 3 , PbO, and B 2 O 3 at a temperature above the saturation temperature of the melt, the plate removed from the melt and the thinner plate provided with a layer of the composition by liquid phase epitaxy. In example II, a plate of samarium gallium garnet Sm 3 Ga 5 O 12 , was treated in a melt which had a composition of Sm 2 O 3 , Ga 2 O 3 , PbO and B 2 O 3 at a temperature above the saturation temperature of the melt, after which the melt was cooled to below the saturation temperature of the melt and maintained there for 15 minutes. Upon inspection the plate was found to be 100Ám thinner and to have a layer of 10Ám deposited on each side of the plate.