Spherical luminescence diode prodn. using selective epitaxy - uses mask exposing locations for producing notches in substrate

摘要

The production process of hemispherical luminescence diodes starts with an even number of discs of a semi-conductive, intermetallic compound substrate, heavily doped by a material forming in the substrate a first conductivity. The polished surfaces of the discs are provided with a passivating coating, having mask apertures for selective epitaxy. Thus first flat depressions are formed under the mask apertures on the main surfaces, into which is epitaxially grown substrate material with amphoterically doped pn-junction at temperatures of approximately 800 deg.C. This substrate material is then contacted and the mask apertures are also surrounded by annular contacts, provided with soldering layers. Finally cubes are cut out from the substrate, each containing a pair of diodes and ground into spherical shape.