首页> 外国专利> Measurement of thermoelectric voltage of semiconductor - used esp. to determine temperature coefficient of semiconductor temperature sensor

Measurement of thermoelectric voltage of semiconductor - used esp. to determine temperature coefficient of semiconductor temperature sensor

机译:半导体热电电压的测量-尤其是使用过的。确定半导体温度传感器的温度系数

摘要

The semiconductor temperature sensor is touched by two different materials and the thermoelectric voltage lying between the points of contact is measured. The contacts between which the thermoelectric voltage is measured can be a measuring holder in which the temperature sensor is inserted. The contacts of different materials can be lined with a layer of abrasion-proof material. The contacts of the temperature sensor are themselves made of different material. Besides the thermoelectric voltage, the resistance of the temperature sensor is measured and the temperature coefficient is determined from the two measured values.
机译:半导体温度传感器由两种不同的材料接触,并测量位于接触点之间的热电电压。在其之间测量热电电压的触点可以是其中插入温度传感器的测量支架。不同材料的触点可以衬有一层耐磨材料。温度传感器的触点本身由不同的材料制成。除热电电压外,还测量温度传感器的电阻,并根据两个测量值确定温度系数。

著录项

  • 公开/公告号DE2445804A1

    专利类型

  • 公开/公告日1976-04-15

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE19742445804

  • 发明设计人 KRAUSEGERHARD;

    申请日1974-09-25

  • 分类号G01K7/00;

  • 国家 DE

  • 入库时间 2022-08-23 02:04:32

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