CAPACITANCE-VOLTAGE MEASUREMENTS FOR DETERMINING IMPURITY PROFILES IN SEMICONDUCTORS

摘要

The measurement of the capacitance-voltage characteristic of a diode is a standard method for obtaining the profile of electrically active impurities in a semiconductor. This report describes automatic equipment constructed to perform the measurements rapidly to the required accuracy. Interpretation of the data is discussed and a computer program is described for calculating the electrical carrier and doping profiles in the semiconductor, This program is available to users of the A.E.R.E. Harwell central computer. Examples of profiles are shown.