Semiconductor chip diffusion doping with boron - from layer contg. gp. 1 or 11 borate or hydroxide , accelerating dissoln. of glass formed

摘要

In the doping of semiconductor chips with B by applying a substance (I) contg. a B cpd. to the surface of the chip and heating the chip, (I) contains an additive of gp. I or II borates or hydroxides, pref. Na2B4O7 or KOH, pref. in amts. of ca 1 wt. % The use of the additive allows drastic redn. of the time required for dissolve ng the glass formed on the surface of the chips during the diffusion process, which otherwise can take up to 25 days for 50 mm dia. chips when a whole stack is placed in the diffusion vessel.