Doped boron phosphide semiconductor prodn. - in gas phase from hydrides or halides doped with Gp. IIB organometallic cpd. Gp. VIB hydride

摘要

Doping of BP semiconductor (I) with a gp. IIb or VIb element comprises adding organic cpds. (II) of the gp. IIb element or hydrides (III) of the gp. VI b element to a gas contg. B hydride or halide (IV) and P hydride or halide (V) and growing (I) in the gas phase at 850-1100 degrees C. The gas-mixt. used contains 0.05-50 pref. 0.5-50 mole (II) or 10-4 to 10 mole (III) per mole (IV). A (I) film with satisfactory crystallinity and excellent physical and electrical properties is produced. In an example, a p-type Zn-doped BP film was grown on a Si substrate at 930 degrees F from a gas contg. PH3, B2H6, diethyl Zn and H2.