METAL-OXIDE-METAL, THIN-FILM CAPACITORS AND METHOD OF MAKING SAME

摘要

In the manufacture of a metal-oxide-metal (MOM) thin-film capacitor, the layer of dielectric material, such as silicon dioxide, is deposited, by thermal decomposition of a silicon compound, over a conductive ground plate; and the Q factor (or quality factor) of the capacitor is enhanced and the dissipation factor of the silicon dioxide is reduced by low-temperature densification of the silicon dioxide.