Etching mask prodn. with single positive negative working resist - crosslinked by electrons and depolymerised by photons

摘要

In the prodn. of etching masks using an organic resist material, which is structurised by high-energy rays, at least one structure is produced by electrons and at least one other by photons, with radiation-specific development in each case. A highly polymeric resist material (I) is used. The photon radiation pref. is short-wave, esp. IV radiation, with a wavelength below 250 nm., and the electron radiation a highly resolving, finely focussed electron beam with an energy of 5-20 keV. Used e.g. for structurising Si or ceramics. Two etching masks can be produced from a single resist material. (I) pref. is a glycidyl methacrylate polymer or copolymer with CH2:CHCOOEt.