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A method for the formation of channel blocking the opposite conductivity types in the intermediate zone between the two mos - components associated zones of a silicon substrate
A method for the formation of channel blocking the opposite conductivity types in the intermediate zone between the two mos - components associated zones of a silicon substrate
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机译:在硅衬底的两个与mos-组分相关的区域之间的中间区域中形成阻挡相反导电类型的沟道的方法
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摘要
A process for fabricating high density, high voltage CMOS devices. The process provides self-aligning, full channel stops which are formed prior to the fabrication of the active devices. The aligned full channel stops and a well are formed in the substrate without intermediate masking.
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