The method of forming a short circuit between the emitter zone and the adjacent zone of the opposite conductivity type of a controllable silicon equal to richter element

摘要

975,990. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. July 29, 1963 [Aug. 15, 1962], No. 31324/62. Heading H1K. A short-circuit between the emitter region 4 of a silicon controlled-rectifier element 1 and the adjacent region of opposite conductivity type is formed by depositing gold in finelydivided form (preferably by evaporation) on to a surface of the element 1 in vacuo to form a layer 8 in contact with both the regions after the element 1 has been heated to a temperature at which the gold forms a eutectic with the silicon, and then cooling the element sufficiently quickly for the gold to solidify before impurity activating material present in the emitter region 4 enters into the gold.