METHOD FOR MANUFACTURING A GARNET BUBBLE FILM AND A BUBBLE MEMORY CHIP USING THE GARNET BUBBLE FILM MANUFACTURED BY THE METHOD

摘要

1458156 Epitaxial growth of garnet bubble film NIPPON TELEGRAPH & TELEPHONE PUBLIC CORP 23 June 1975 [24 June 1974] 26535/75 Heading B1S A method of manufacturing a garnet bubble film comprises providing a rare earth garnet film by liquid phase epitaxy on a non-magnetic gadolinium gallium garnet single crystal substrate in which the substrate surface is tilted by an angle of 4-7‹ from the (111) plane. It is preferred to tilt the substrate surface towards the (110) or (211) planes, and to use a rare earth garnet film selected from (YSm) 3 (GaFe) 5 O 12 , (YEu) 3 (GaFe) 5 O 12 and (YEuGd) 3 (GaFe) 5 O 12 .