首页> 外国专利> Mask imaging photoelectronic projector - has mask as positive electrode of acceleration field between photocathode and semiconductor wafer

Mask imaging photoelectronic projector - has mask as positive electrode of acceleration field between photocathode and semiconductor wafer

机译:掩模成像光电投影仪-以掩模作为光电阴极与半导体晶圆之间加速场的正极

摘要

The photoelectronic image projector is used for forming a mask on a semiconductor wafer. It uses an electric acceleration field directed at right angles to a photocathode and the wafer. The mask (6) forms the positive electrode of the acceleration field and is mounted in spaced manner and parallel to the photocathode (3) between the same and the wafer. The mask (6) consists of a support grid and of structure increased by the grid width. The acceleration voltage and the distance of the mask from the wafer meet a specified relation, concerned with a tangential component of velocity of electrons emitted from the photocathode. Typically the mask has a positive potential of the order of 10V in relation to the wafer.
机译:光电图像投影仪用于在半导体晶片上形成掩模。它使用垂直于光电阴极和晶片的电加速场。掩模(6)形成加速场的正电极,并且以隔开的方式并且平行于光电阴极(3)安装在掩模和晶片之间,该掩模与光电阴极(3)平行。掩模(6)由支撑格栅组成,并且其结构增加了格栅宽度。加速电压和掩模到晶片的距离满足特定关系,该关系与从光电阴极发射的电子的速度的切向分量有关。通常,掩模相对于晶片具有约10V的正电势。

著录项

  • 公开/公告号DE2719799A1

    专利类型

  • 公开/公告日1978-11-02

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE19772719799

  • 发明设计人 FROSIENJUERGENDIPL.-ING.;

    申请日1977-04-28

  • 分类号H01J39/16;H01J37/30;

  • 国家 DE

  • 入库时间 2022-08-22 21:57:18

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