Aluminum arsenide eutectic gallium arsenide solar cell

摘要

An improved gallium arsenide solar cell is provided by forming a P+ layer on top of a wafer of plural vertical PN junction eutectic gallium arsenide crystal by liquid phase epitaxial growth of P doped GaAs followed by liquid phase epitaxial growth at Al.sub.x AsGa.sub.l-x on the surface of the vertical PN junction substrate. The deposited GaAs layer with P dopant and the Al.sub.x AsGa.sub.l-x layer forms horizontal P-N junctions with the N-type vertical regions. An N+ region is formed on the solar cell backside by ion implantation of an N dopant followed by a pulse electron beam current of the implanted region.