首页> 外国专利> TRANSPARENT FABRICATION MASKS UTILIZING MASKING MATERIAL SELECTED FROM THE GROUP CONSISTING OF SPINELS, PEROVSKITES, GARNETS, FLUORIDES AND OXY-FLUORIDES

TRANSPARENT FABRICATION MASKS UTILIZING MASKING MATERIAL SELECTED FROM THE GROUP CONSISTING OF SPINELS, PEROVSKITES, GARNETS, FLUORIDES AND OXY-FLUORIDES

机译:利用从尖晶石,钙钛矿,石榴石,氟化物和氧化氟组成的组中选择的掩膜材料制成的透明制造面具

摘要

A mask for the manufacture of semiconductor and other very small components. The mask is comprised of patterns of multi-component oxides and fluorides, such as spinels, perovskites, and garnets. In general, the materials are harder than the components being manufactured and are opaque to the wavelength used in photoresist techniques, while being transparent to the visible wavelengths. Materials with an energy gap between approximately 2.8 eV and 5 eV satisfy these optical properties, a particular example being GaFeO3. These masks are not damaged by surface defects on the components and can be visually aligned.
机译:用于制造半导体和其他非常小的组件的掩模。掩模由多组分氧化物和氟化物的图案组成,例如尖晶石,钙钛矿和石榴石。通常,材料比所制造的部件硬,并且对于光致抗蚀剂技术中使用的波长是不透明的,而对于可见波长是透明的。能隙在大约2.8 eV和5 eV之间的材料可以满足这些光学特性,例如GaFeO3。这些掩膜不受组件表面缺陷的损坏,可以目视对准。

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