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Nano-particle removal from surface of materials used in EUV mask fabrication.

机译:从EUV掩模制造中使用的材料表面去除纳米粒子。

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With device scaling, the current optical lithography technique is reaching its technological limit to print small features. Extreme Ultra-Violet (EUV) lithography has shown promise to print extremely thin lines reliably and cost-effectively. Many challenges remain before introducing EUV to large scale manufacturing. The main challenge addressed in this study is particle removal from EUV mask surfaces (CrON1, CrON2, and fused silica) and thermal oxide (SiO2). Effective pre-clean procedures were developed for each surface. As chemical cleaning methods fail to meet SEMATECH criteria, addition of megasonic energy to EUV mask cleaning baths is seen as a promising cleaning methodology.; As the requirement to print fine lines needs to be met, all materials used in EUV mask fabrication either absorb the incident EUV wavelength light or reflect it. Therefore, the masks used in the industry will be reflective instead of the conventional transmissive masks. Also, for the same reason, no protective pellicle can be used leading to all the surfaces unprotected from particle contamination. To avoid the detrimental effect of the particle contamination, a cleaning study for nano-particle removal was performed.; A dark field microscope was utilized to study the removal of gold nano-particles from surfaces. The cleaning procedures utilized H2SO4 and NH4OH chemistries with and without megasonic irradiation. The cleaning variables were bath concentration, temperature, and megasonic power. The contamination variables were the gold nanoparticles charge and size, from 40nm to 100nm.; For 100 nm negatively charged gold nano-particles deposited on a CrON1 surface, a 1:10 H2SO4:DI bath at boiling temperature (101°C) without megasonics gave high particle removal efficiency (PRE) values as did a 1:10 H2SO4:DI bath at 35°C with 100W megasonics. Comparison of removal of poly diallyl-dimethyl ammonium chloride (PDAC) coated and uncoated gold nano-particles deposited on a CrON1 surface using dilute H2SO4 baths indicated that the coated, positively charged nano-particles were more difficult to remove. PRE trends for different baths indicate surface dissolution (shown to be thermodynamically favorable) as the particle removal mechanism. However, experimental etch rates indicated minimal surface etching in a 10 minute bath. Increased surface roughness indicated possible local galvanic corrosion at particle sites. Low surface etching results meet SEMATECH requirements.; During the fused silica surface cleaning study, particle charge (negative) and size (100 nm) of the contamination source and cleaning bath chemistry (NH4OH) were kept constant. Low PREs were obtained at room temperature for all NH4OH bath concentrations; however, high PREs were obtained at an elevated temperature (78°C) without megasonics and at room temperature in more dilute chemistries with megasonic power applied. Similar PRE trends were demonstrated for thermal SiO2 surfaces. The experimental etch rates of the thermal SiO2 agree with published values.
机译:随着器件的缩放,当前的光学光刻技术正达到其印刷小特征的技术极限。极紫外(EUV)光刻技术显示出可以可靠且经济高效地打印极细线条的希望。在将EUV引入大规模生产之前,仍然存在许多挑战。这项研究解决的主要挑战是从EUV掩模表面(CrON1,CrON2和熔融二氧化硅)和热氧化物(SiO2)去除颗粒。针对每个表面开发了有效的预清洁程序。由于化学清洗方法不能满足SEMATECH标准,因此在EUV面罩清洗液中添加兆声波能量被认为是一种很有前途的清洗方法。由于必须满足打印细线的要求,因此,EUV掩模制造中使用的所有材料要么吸收入射的EUV波长的光,要么对其进行反射。因此,工业上使用的掩模将是反射的,而不是常规的透射掩模。同样,出于同样的原因,不能使用防护薄膜,从而导致所有表面都无法防止颗粒污染。为了避免颗粒污染的有害影响,进行了清洁研究以去除纳米颗粒。利用暗场显微镜来研究从表面去除金纳米颗粒。清洁程序使用有或没有兆声辐射的H2SO4和NH4OH化学物质。清洁变量是浴液浓度,温度和兆声功率。污染变量是金纳米粒子的电荷和大小,从40nm到100nm。对于沉积在CrON1表面上的100 nm带负电的金纳米粒子,在沸腾温度(101°C)下没有兆频超声的1:10 H2SO4:DI浴与1:10的H2SO4一样具有高的颗粒去除效率(PRE)值:在35°C下用100W的超音速去离子水。使用稀H2SO4浴去除沉积在CrON1表面的聚二烯丙基二甲基氯化铵(PDAC)涂层和未涂层​​金纳米颗粒的比较表明,涂层带正电的纳米颗粒更难去除。不同浴液的PRE趋势表明表面溶解(显示出热力学上的优势)是颗粒去除的机理。但是,实验蚀刻速率表明在10分钟的浴中表面蚀刻最少。表面粗糙度的增加表明在颗粒部位可能存在局部电化腐蚀。低表面蚀刻结果符合SEMATECH要求。在熔融石英表面清洁研究中,污染源的颗粒电荷(负)和大小(100 nm)以及清洁浴化学物质(NH4OH)保持恒定。对于所有NH4OH浴浓度,在室温下均获得低PRE。然而,在不使用超音速的升高温度(78°C)和室温下,在施加超音波功率的更稀薄化学中,可获得较高的PRE。 SiO2热表面也显示出类似的PRE趋势。热SiO2的实验蚀刻速率与公布的值一致。

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