Analysing traps in semiconductors - uses double correlation with two different charging pulses for capacitance measurement

摘要

The analysis method for investigating traps in semiconductor materials is suitable for semiconductors having deposited Schottky contacts as well as those having internal p-n junctions. Double correlation is used in which two successive pulses of different shape within a defined time slot are correlated together. The traps in the material are charged in two separate areas by the two pulses so that two different relaxation signals may be measured. The time-depenedent capacitance variation resulating from emission of charge-carriers out of the traps into a space-charge zone is thus measured and multiplied and integrated with a reference function. Correlation can be done using a 4-channel correlator and word generator or with a 4-channel box-car integrator.