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Low forward Ohmic value semiconductor arrangement - having rectifying characteristics, can be used to replace large surface diode in communication system
Low forward Ohmic value semiconductor arrangement - having rectifying characteristics, can be used to replace large surface diode in communication system
The semiconductor arrangement is particularly usable to replace a large surface diode in a monolithic component for a telephone communication system. A diode (D) short circuits the path between a principal electrode (cathode n) of a thyristor (T) and the base (base n) of this thyristor, and that the conductivity type (n) of the layer (cathode) of the diode (D) which is connected to the principal electrode (cathode n) of thyristor (T) is the same type as the conductivity type (n) of this principal electrode (cathode n). The semiconductors arrangement provides rectifying characteristics and is designed to give particularly low resistance in the forward direction.
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