首页> 外国专利> Low forward Ohmic value semiconductor arrangement - having rectifying characteristics, can be used to replace large surface diode in communication system

Low forward Ohmic value semiconductor arrangement - having rectifying characteristics, can be used to replace large surface diode in communication system

机译:低正向欧姆值半导体装置-具有整流特性,可用于代替通信系统中的大面积二极管

摘要

The semiconductor arrangement is particularly usable to replace a large surface diode in a monolithic component for a telephone communication system. A diode (D) short circuits the path between a principal electrode (cathode n) of a thyristor (T) and the base (base n) of this thyristor, and that the conductivity type (n) of the layer (cathode) of the diode (D) which is connected to the principal electrode (cathode n) of thyristor (T) is the same type as the conductivity type (n) of this principal electrode (cathode n). The semiconductors arrangement provides rectifying characteristics and is designed to give particularly low resistance in the forward direction.
机译:该半导体装置特别可用于代替电话通信系统的整体部件中的大表面二极管。二极管(D)使晶闸管(T)的主电极(阴极n)与该晶闸管的基极(base n)之间的路径短路,并且使该层的导电类型(n)短路。与晶闸管(T)的主电极(阴极n)连接的二极管(D)与该主电极(阴极n)的导电类型(n)相同。半导体装置提供整流特性,并且被设计为在正向方向上提供特别低的电阻。

著录项

  • 公开/公告号FR2245085B1

    专利类型

  • 公开/公告日1979-02-16

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号FR19740031222

  • 发明设计人

    申请日1974-09-16

  • 分类号H01L27/06;H01L29/74;

  • 国家 FR

  • 入库时间 2022-08-22 19:39:40

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号