Brief description of embodiments of the contacts 'metal - semiconductor' a high density of injection, and devices which are obtained by said other

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• 3. Brief description of embodiments of the contacts "metal - semiconductor" a high density of injection, and devices which are obtained by said other [P] . 法国专利： FR2339956A1 . 1977-08-26

  机译： 对高密度注入的“金属-半导体”触点实施例的简要说明，以及由所述另一个获得的器件

• 4. A method for the production of metal - semiconductors - contacts with a large current injection density [P] . 德国专利： DE2703322A1 . 1977-08-04

  机译： 一种具有大电流注入密度的金属-半导体-触点的生产方法

• 5. Brief description of embodiments of the metallization on a semiconductor device. [P] . 法国专利： FR2670604B1 . 1993-02-12

  机译： 半导体器件上金属化的实施方案的简要描述。

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