首页> 外国专利> Brief description of the growth of a monocrystalline film on a substrate when it is not match between the materials constituting the film and of the substrate and the structure in the resultant

Brief description of the growth of a monocrystalline film on a substrate when it is not match between the materials constituting the film and of the substrate and the structure in the resultant

机译:当构成膜的材料和衬底的材料与所得结构之间不匹配时,对单晶膜在衬底上的生长的简要描述

摘要

P process of growth of a monocrystalline film on a substrate when it is not match between the materials constituting the film and of the substrate and the structure in the resultant. / p & & p & a monocrystalline substrate 10, typically of sodium chloride, is firstly covered epitaxially by deposition under vacuum, of islets 12 made of nickel hemispherical shape, and then by epitaxial deposition under vacuum of a monocrystalline layer of silver, 13, followed by the epitaxial deposition under vacuum of a monocrystalline layer of gold 14. The use of islets makes it possible to reduce # considerably the defects generated by the non - agreement of the materials. / p & & p & application in particular in the industry of semi - conductors, or this process can be used for the deposition of silicon on alumina. / p
机译:

当单晶膜在构成膜和衬底的材料与所得结构之间不匹配时在衬底上的生长过程。 & &首先通过真空沉积外延覆盖由镍半球形镍制成的胰岛12,通常是氯化钠的单晶衬底10,然后在真空下外延沉积银13的单晶层,然后在真空下外延沉积。金的单晶层14的真空。使用小岛可以大大减少#由于材料不一致而产生的缺陷。 & &尤其是在半导体行业中的应用,或该方法可用于在氧化铝上沉积硅。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号