首页> 外国专利> CONTROL METHOD OF MAGNETIC BUBBLE STEADY EXISTENCE MAGNETIC FIELD FOR MAGNETIC BUBBLE MEMORY ELEMENT

CONTROL METHOD OF MAGNETIC BUBBLE STEADY EXISTENCE MAGNETIC FIELD FOR MAGNETIC BUBBLE MEMORY ELEMENT

机译:磁气泡存储元件的磁气泡稳定存在磁场的控制方法

摘要

PURPOSE:To ensure the control for the magnetic bubble steady existence magnetic field in a simple method and thus to increase the yield by giving the thermal treatment to the chip in which the ion implanting is given to the garnet film for bubble. CONSTITUTION:A thermal treatment of 200-500 deg.C is given to the chip into which the ion of Ne or the like is implanted to suppress the hard bubble of the magnetic bubble element. The collapse magnetic field where the steady existence is ensured for the bubble can be controlled accurately just by controlling the temperature and time of the thermal treatment. As a result, the nondefective and usable chips can be obtained through the thermal treatment among those which are hitherto decided defective at the growing stage of the crystal for the bubble material, thus increasing the yield at the material growing stage. Furthermore, the dispersion of the collapse magnetic field can be made even between chips by controlling the temperature of the thermal treatment, and as a result the active margin of the element can be increased.
机译:目的:通过一种简单的方法来确保对气泡的稳定存在磁场的控制,从而通过对对气泡的石榴石膜进行离子注入的芯片进行热处理来提高产量。组成:对芯片进行200-500℃的热处理,向其中注入Ne等离子以抑制磁性气泡元件的硬泡。仅通过控制热处理的温度和时间就可以精确地控制确保气泡稳定存在的坍塌磁场。结果,通过热处理,可以在气泡材料的晶体生长阶段中迄今判定为有缺陷的那些中获得无缺陷和可用的芯片,从而提高了材料生长阶段的成品率。此外,通过控制热处理温度,即使在芯片之间也可以使坍塌磁场分散,结果,可以提高元件的有效余量。

著录项

  • 公开/公告号JPS5528518A

    专利类型

  • 公开/公告日1980-02-29

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP19780100171

  • 发明设计人 MATSUYAMA SHIYUNSUKE;MORI TOMOYUKI;

    申请日1978-08-17

  • 分类号G11C11/14;G11C19/08;

  • 国家 JP

  • 入库时间 2022-08-22 18:53:46

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