首页> 外国专利> ELEMENTARY ANALYSIS METHOD BY ION EXCITATION AUGER ELECTRONIC SPECTRAL DIFFRACTION

ELEMENTARY ANALYSIS METHOD BY ION EXCITATION AUGER ELECTRONIC SPECTRAL DIFFRACTION

机译:离子激发俄勒电子谱衍射的元素分析方法。

摘要

PURPOSE:To also measure the distribution of a hydrogen component with metallic components in a sample, by spectroscopically analyzing ion excitation Auger electrons, which are discharged from the sample by irradiating ion beams to the sample, by means of an Auger electronic analysis instrument. CONSTITUTION:The specified analysis spectra of Si, etc. are measured by introducing ion excitation Auger electrons, which are discharged from a sample by irradiating ion beams to the sample, to an Auger electronic analysis instrument. When detecting a condition that hydrogen in an amorphous Si-H alloy is distributed, a sample S is prepared which is manufactured by forming an amorphous Si film containing H in approximate 10atm% on an Si monocrystal substrate 1. The ion beams a of the inert gases of argon, etc. are irradiated to the sample S, and the ion excitation Auger electrons b are discharged. The Auger electrons b are let pass through a variable electric-field passage 2 of a cylindrical electron energy analysis instrument, and a spectrum of Auger electron energy peculiar to the sample is detected by means of a detector 3.
机译:用途:还通过光谱分析离子激发俄歇电子来测量样品中氢成分与金属成分的分布,这些电子通过俄歇电子分析仪通过将离子束照射到样品而从样品中释放出来。组成:Si等规定的分析光谱是通过将离子激发俄歇电子引入俄歇电子分析仪来测量的,该离子激发俄歇电子通过将离子束照射到样品而从样品中释放出来。当检测到非晶态Si-H合金中的氢分布的条件时,制备样品S,该样品S是通过在Si单晶衬底1上形成含有约10atm%的H的非晶态Si膜来制造的。惰性离子束a氩气等气体被照射到样品S,并且离子激发俄歇电子b被释放。使俄歇电子b通过圆柱形电子能量分析仪器的可变电场通道2,并通过检测器3检测样品特有的俄歇电子能谱。

著录项

  • 公开/公告号JPS5574450A

    专利类型

  • 公开/公告日1980-06-05

    原文格式PDF

  • 申请/专利权人 ULVAC CORP;

    申请/专利号JP19780147836

  • 发明设计人 HIRAKI AKIO;

    申请日1978-12-01

  • 分类号G01N23/227;

  • 国家 JP

  • 入库时间 2022-08-22 18:50:22

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号