Amplifier stage, comprising a first strength - fet

摘要

An alternating current amplifier is based upon IG-FET semiconductor circuitry and operates to increase the effect of the control gate potential upon the amplitude and direction of the memory gate discharge. The element has a substrate (Su) onto which is formed a substrate (I) of insulating material. A memory gate (G1) is formed with a 50nm thick isolator layer between it and the insulator. A controlled gate (G2) operates capacitively upon the memory gate (G1) with ultra violet light (UV) being applied. Windows (Bf) in the insulating surface allow the incident ultra violet light to penetrate into the sub layers.