Semiconductor charge carrier life determination - by measuring excess electrons and holes when checking injected carriers

摘要

The determination of charge carriers life time in a semiconductor is carried out by measuring excess inflow of electrons and holes in three directions. The measurement of injected charge carriers distribution is made with laser beam absorption of recombination radiation. The intensity checking is in gaps over the surface of probe when the width of the gap and the aperture angle of radiation are small and do not blur the intensity distribution pattern.