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Semiconductor wafer thermal gradient zone melting processing - using a wafer with a bevelled edge to minimise thermal gradient edge distortions
Semiconductor wafer thermal gradient zone melting processing - using a wafer with a bevelled edge to minimise thermal gradient edge distortions
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机译:半导体晶圆热梯度区熔化处理-使用具有斜角边缘的晶圆以最小化热梯度边缘变形
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摘要
In processing a semiconductor wafer by thermal gradient zone melting (TGZM) to form doped regions of recrystallised material in the wafer, a wafer is used whose outer edge is bevelled at predetermined included angle (alpha) with the bottom surface of the wafer. Pref. alpha = 41 degrees plus-or-minus 3 degrees. The bevelled edge minimises thermal gradient edge distortions without the need for additional processing steps or heat shields or guard rings, etc.
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