Electron irradiation process of glass passivated semiconductor devices for improved reverse characteristics

摘要

Semiconductor devices with improved reverse characteristics are obtained by exposing the semiconductor bodies of the devices that are passivated by alkali-free glasses to a high energy radiation such as an electron radiation so as to shorten a life time of the bodies down to a predetermined value, while increasing the reverse leakage current of the bodies, and by subjecting the irradiated semiconductor bodies to an annealing treatment at a temperature of 250° to 350° C. for a sufficient time so as to decrease the reverse leakage current down to a predetermined value, while maintaining the order of the shortened life time.