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GALLIUM ARSENIDE CRYSTAL OF LOW DEFECT DENSITY AND SEMIIINSULATION
GALLIUM ARSENIDE CRYSTAL OF LOW DEFECT DENSITY AND SEMIIINSULATION
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机译:低缺陷密度和半绝缘的砷化镓晶体
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摘要
PURPOSE:To obtain the large-sized crystal of which the defect such as dislocation is reduced and which has an improved quality by a method wherein the gallium arsenide crystal containing deep acceptor impurity excessively as compared with shallow donor impurity is made to contain specific boron of which the density of oxygen is less than a specified value. CONSTITUTION:The gallium arsenide crystal of semi-insulation containing the deep acceptor impurity such as chromium and vanadium excessively in density compared with the shallow donor impurity such as silicon and having specific electric resistance of 106OMEGAcm or more in 300 deg.K is made to contain the boron of 1.2X1017- 1.2X1018cm-3 and, in addition, the density of oxygen thereof is set at 2X1018cm-3 or less. By this method, the large-sized gallium arsenide crystal having the diameter of 50mm. or more and little crystal defect such as dislocation and deposits can be obtained.
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机译:用途:为了获得一种大尺寸晶体,该晶体的位错减少了,并且其质量得到了改善,该方法是通过将比浅施主杂质含有更多的深受主杂质的砷化镓晶体包含特定的硼原子来实现的。氧密度小于规定值。组成:半绝缘的砷化镓晶体比深的施主杂质(如硅)与铬和钒等深施主杂质的密度过大,在300度K下的比电阻为10 6 OMEGAcm或更高。使其含有1.2×10 17〜1.2×10 18 cm -3的硼,另外,其氧的密度为2×10 18 cm -3以下。通过这种方法,直径为50mm的大尺寸砷化镓晶体。或更多且几乎没有晶体缺陷如位错和沉积。
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