首页> 外国专利> Process for the manufacture of a thyristor with the regions of the emitter, base emitter, base cathode and cathode; and thyristor with an emitter, base of emitter, base cathode irradiated by radiation Electronica

Process for the manufacture of a thyristor with the regions of the emitter, base emitter, base cathode and cathode; and thyristor with an emitter, base of emitter, base cathode irradiated by radiation Electronica

机译:具有发射极,基极发射极,基极阴极和阴极的区域的晶闸管的制造方法;以及带有发射极的晶闸管,发射极的基极,电子辐射辐射的基极阴极

摘要

pA method for improving the relationship of reverse recovery charge Qrr, reverse recovery time tq, and forward voltage drop VTM comprises the steps of irradiating the thyristor with a first predetermined dosage of light ions, preferably alpha or proton particles and then irradiating the thyristor with a second predetermined dosage of electron particles./p[EP0032386A2]
机译:改善反向恢复电荷Qrr,反向恢复时间tq和正向电压降VTM的关系的方法包括以下步骤:用第一预定剂量的轻离子,优选α或质子粒子辐照晶闸管,然后辐照具有第二预定剂量电子粒子的晶闸管。 [EP0032386A2]

著录项

  • 公开/公告号BR8100075A

    专利类型

  • 公开/公告日1981-07-21

    原文格式PDF

  • 申请/专利权人 WEC;

    申请/专利号BR19818100075

  • 发明设计人 BARTKO J;TARNEJA K;

    申请日1981-01-08

  • 分类号H01L21/26;H01L29/74;

  • 国家 BR

  • 入库时间 2022-08-22 16:18:49

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