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Anodic oxidn. appts. for silicon wafer - with tungsten wire reference electrode over wafer for controlled oxidn. of defect pn-junction
Anodic oxidn. appts. for silicon wafer - with tungsten wire reference electrode over wafer for controlled oxidn. of defect pn-junction
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机译:阳极氧化。 Appts。用于硅晶片-钨丝参比电极位于晶片上方,用于受控氧化。 PN结的缺陷
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摘要
Appts. for the anodic oxidn. of a Si wafer, which is made the anode in a cell (1) filled with electrolyte and having a noble metal cathode, also has a W wire (5) as reference electrode, which is placed over the Si wafer (3) and pref. ca. 1 mm from this. Pref. the W wire is (partly) coated with oxide. The Si wafer is placed on a metal or graphite plate (2) and is parallel to a Pt cathode. The appts. is specified for use in the anodic oxidn. of Si wafers with defect pn-junctions. Defect pn-junctions and transistors with low breakdown voltage or high leakage current can be oxidised selectively.
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