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Integrated semiconductor Darlington pair construction - has input zero gain transistor and has transistor bases connected to surface layers by heavily doped zones
Integrated semiconductor Darlington pair construction - has input zero gain transistor and has transistor bases connected to surface layers by heavily doped zones
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机译:集成半导体达林顿对结构-具有输入零增益晶体管,并且晶体管基极通过重掺杂区连接到表面层
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摘要
A Darlington pair amplifier (100) consists of two transistors in a monolithic planar structure. Switching speed is increased by use of a zero gain input transistor without increasing the size or complexity of the amplifier. The areas of the epitaxial layer which make up the transistor bases are connected to the surface layers by heavily doped zones, the doping type being the same as that of the bases. The emitter layers, also heavily doped (up to 1018 atoms/cm3), extend in the superficial layer. The depth, doping and profile of the doping are almost identical to that of a power transistor. The connection layer to the surface conductors is taken between the areas occupied by the transistors.
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