首页> 外国专利> Pair of bipolar transistors having base zones which are electrically conductively connected to one another, and a process for producing the pair of transistors

Pair of bipolar transistors having base zones which are electrically conductively connected to one another, and a process for producing the pair of transistors

机译:一对具有彼此导电连接的基区的双极晶体管,以及制造该对晶体管的方法

摘要

A pair of bipolar transistors are formed in a semiconductor substrate with each transistor having at least one emitter, one base and at least one collector. At least the base is in the form of a doped zone in the substrate. The two base zones are electrically conductively connected to one another and the transistors are constructed or arranged in the substrate in such a manner that in each case free boundary faces of the two base zones lie opposite one another. The base connection is formed by an additionally doped zone in the interspace between the base zones, the doped zone having the same type of doping as the base zones.
机译:一对双极型晶体管形成在半导体衬底中,每个晶体管具有至少一个发射极,一个基极和至少一个集电极。至少基底在衬底中呈掺杂区的形式。两个基区彼此导电连接,并且晶体管在衬底中构造或布置成使得在每种情况下两个基区的自由边界面彼此相对。基础连接由在基础区域之间的间隙中的另外的掺杂区域形成,该掺杂区域具有与基础区域相同类型的掺杂。

著录项

  • 公开/公告号US4038676A

    专利类型

  • 公开/公告日1977-07-26

    原文格式PDF

  • 申请/专利权人 SIEMENS AKTIENGESELLSCHAFT;

    申请/专利号US19750634038

  • 发明设计人 KARL GOSER;

    申请日1975-11-21

  • 分类号H01L29/72;H01L29/48;H01L29/56;H01L29/64;

  • 国家 US

  • 入库时间 2022-08-22 23:30:46

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