首页> 外国专利> Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps

Single crystal prepn. by zone melting - using plasma jet to effect melting, with acid pickle operation between two melting steps

机译:单晶制备。按区域熔化-使用等离子流进行熔化,在两个熔化步骤之间进行酸洗操作

摘要

The parent patent described a method of preparing crystals esp. Si by zone melting in which a polycrystalline ingot is placed in a boat, fused by a plasma jet and then the boat is displaced w.r.t. the plasma. In this addition, the ingot is pickled in acid between two such plasma fusion treatments. The heat necessary to fuse the zone is provided with a plasma jet at 10000-15000 K. The temp. distribution inside the molten zone is rotated about the axis of the plasma jet with max. at the surface and a min. at the lower part which is in contact with the boat. Improved purificn. is achieved.
机译:母专利描述了一种特别是制备晶体的方法。硅通过区域熔化而形成,其中将多晶锭放置在舟皿中,通过等离子流熔化,然后将舟皿移位。等离子。另外,在两次这样的等离子体融合处理之间,将锭在酸中酸洗。在10000-15000 K的温度下,等离子流提供了熔化该区域所需的热量。熔融区内部的分布绕等离子束的轴旋转最大。在表面和一分钟。在与船接触的下部。改善净化。已完成。

著录项

  • 公开/公告号FR2455921A2

    专利类型

  • 公开/公告日1980-12-05

    原文格式PDF

  • 申请/专利权人 ANVAR;

    申请/专利号FR19790011607

  • 发明设计人

    申请日1979-05-08

  • 分类号C30B13/16;

  • 国家 FR

  • 入库时间 2022-08-22 15:05:05

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号