METHOD FOR MANUFACTURING AN INTEGRATED INJECTION LOGIC STRUCTURE HAVING A SELF-ALIGNED BASIC CONTACT

摘要

P IN AN EPITAXIAL POCKET 15 ARE SPACED REGIONS 28A, B, C, D OF MATERIAL OF A FIRST TYPE OF CONDUCTIVITY MORE HIGHLY DOPED THAN THE EPITAXIAL LAYER; REGIONS OF THE OPPOSITE CONDUCTIVITY TYPE SEPARATE THEM; AND A REGION OF ELECTRICALLY CONDUCTIVE MATERIAL 22B IS PROVIDED ON ALMOST THE WHOLE AREA OF EACH OF THESE SPACED REGIONS AND ON THE INSULATING MATERIAL. /P