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METHOD OF SIMULTANEOUSLY FORMING BASE DIFFUSION FROM SINGLE SOURCE PRELIMINARY ACCUMULATION AND P+PROVILE
METHOD OF SIMULTANEOUSLY FORMING BASE DIFFUSION FROM SINGLE SOURCE PRELIMINARY ACCUMULATION AND P+PROVILE
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机译:单源初步累积和P +剖面同时进行地层扩散的方法
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摘要
A single source predeposition is required to concurrently form a base diffusion profile and p+ profile. For a boron doped silicon semiconductor devices this can be accomplished by depositing a silicon nitride layer directly over a boron source glass layer. After opening windows to the underlying silicon, diffusion in a wet oxide atmosphere results in formation of a resulting oxide in the windows with expenditure of boron by diffusion into this oxide as well as diffusion into the underlying substrate at a reduced concentration. In adjacent areas masked by the silicon nitride the boron source diffuses unidirectionally into the substrate yielding a maximum dopant concentration.
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