首页> 外国专利> halfgeleiderdiode,comprising a layer of a ferromagnetic semiconductor boules of chalcogenide chroomspineltype and a layer of a semiconductor boules of sulphur indiumspineltype.

halfgeleiderdiode,comprising a layer of a ferromagnetic semiconductor boules of chalcogenide chroomspineltype and a layer of a semiconductor boules of sulphur indiumspineltype.

机译:半格尔德二极管,包括一层硫族化物chroomspineltype的铁磁半导体管和一层硫铟铟盐型的半导体管。

摘要

A photovoltaic converter, useful for example as a photodetector or solar cell, comprising a main unit consisting of a p-n heterojunction of a p- or n-type magnetic semiconductor MCr2X4 in which M is Zn, Cd or Hg and X is O, S, Se or Te and an n- or p-type semiconductor M'In2S4 in which M' is Zn, Cd or Hg and which has an optical absorption edge at a shorter wavelength than the optical absorption edge of the MCr2X4; a first electrode ohmically fixed to the surface of the MCr2X4; and a second electrode fixed ohmically to the surface of the M'In2S4 and allowing light to reach the surface of M'In2S4. With a decrease in temperature, the photovoltaic converter has the long wavelength edge of its spectral photovoltaic response shifted to a longer wavelength contrary to known photovoltaic converters.
机译:一种光电转换器,例如用作光电探测器或太阳能电池,包括一个主要单元,该主要单元由p型或n型磁性半导体MCr2X4的pn异质结组成,其中M为Zn,Cd或Hg,X为O,S, Se或Te以及n型或p型半导体M'In 2 S 4,其中M'为Zn,Cd或Hg,并且具有比MCr2X4的光吸收边缘短的波长的光吸收边缘;欧姆固定在MCr2X4表面的第一电极;第二电极欧姆固定在M'In2S4的表面上,并允许光到达M'In2S4的表面。与已知的光伏转换器相反,随着温度的降低,光伏转换器的光谱光伏响应的长波长边缘移至更长的波长。

著录项

  • 公开/公告号NL171310B

    专利类型

  • 公开/公告日1982-10-01

    原文格式PDF

  • 申请/专利号NL19780002106

  • 发明设计人

    申请日1978-02-24

  • 分类号H01L31/06;

  • 国家 NL

  • 入库时间 2022-08-22 13:42:56

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