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Mfg. crystalline silicon sheet or strip with columnar structure - suitable for making large solar cell, by sintering and brief pulsed surface heating

机译:制造具有柱状结构的晶体硅片或带-适用于通过烧结和短暂脉冲表面加热来制造大型太阳能电池

摘要

Prodn. involves making a slip from Si powder with a particle size of under 1 micron and a binder, spreading the slip on a substrate and drying the sheet formed, then removing the substrate and sintering the sheet below 1400 deg.C on an inert, refractory substrate in a protective gas atmos. until a layer of monocrystalline granules of dia. corresp. to the thickness of the sheet is obtd. as in 2927086. The novel feature is that, during sintering, short heat ray(s) are directed downwards onto the plane Si sheet on the sintering substrate, the heating pulse duration being adjusted so that the Si sheet melts briefly in the thin surface layer. Max grain growth is obtd. without reaction with the substrate.
机译:产品包括用粒径小于1微米的Si粉和粘合剂制成粉浆,将粉浆散布在基材上,干燥形成的薄片,然后取出基材,并在1400℃以下的惰性耐火基材上烧结薄片在保护性气体氛围中。直至形成一层单晶直径的dia。对应薄到板的厚度。如2927086中所述。新颖的特征在于,在烧结期间,短热射线被向下定向到烧结基板上的平面硅片上,调节加热脉冲的持续时间,使得硅片在薄表面层中短暂地熔化。 。最大晶粒长大。不与底物反应。

著录项

  • 公开/公告号DE3017923A1

    专利类型

  • 公开/公告日1981-11-12

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE19803017923

  • 发明设计人 SCHMELZHELMUTDIPL.-PHYS.DR.;

    申请日1980-05-09

  • 分类号C30B1/06;C30B29/06;H01L31/18;C01B33/02;

  • 国家 DE

  • 入库时间 2022-08-22 12:44:05

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